Work

Silicon carbide metal-semiconductor field-effect transistor with and without a low-doped buffer: Influence of substrate traps

Year: 2006

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.2212069

Author: Andrei V. Los

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2000238101

FWCI: 1.012

Cites: 14

Cited by: 11

Related to: 10