Work

4-11 mu m infrared emission and 300 K light emitting diodes from arsenic-rich InAs1-xSbxstrained layer superlattices

Year: 1995

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/0268-1242/10/8/023

Authors: P Tang, M J Pullin, S J Chung, C C Phillips, R A Stradling, A G Norman, Y B Li, L Hart

Institution: Imperial College London

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2000295247

FWCI: 2.44

Cites: 13

Cited by: 51

Related to: 10