Trap states in InAlN/AlN/GaN-based double-channel high electron mobility transistors
Year: 2013
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.4802431
Institution: Xidian University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2000321358