Thermoelectric performance of Zn-substituted type-VIII clathrate Ba8Ga16Sn30 single crystals
Year: 2012
Type: article
Abstract: We have grown single-crystalline samples of Zn-substituted type-VIII clathrate Ba8Ga16Sn30 with n-type carriers by Sn-flux method. The actual compositions of the single crystals were found to be described as Ba8Ga15.8−2yZnySn30.2+y (y = 0 ∼ 0.54), where the charge balance is well maintained. As y goes from 0 to 0.42, the resistivity at 300 K decreases from 5.3 to 3.0 mΩ cm gradually, but the effective mass is essentially constant at 1.2 ∼ 1.5m0, indicating intact band structure near the conduction band minima upon Zn substitution for Ga. At elevated temperatures, the ambipolar effect on the thermal conductivity becomes less pronounced upon Zn doping, and the dimensionless figure of merit ZT for y = 0.07 and 0.42 remains at rather high values compared with the nondoped sample.
Source: Journal of Applied Physics
DOI: 10.1063/1.3673863
Institutions: Hiroshima University, Henan Polytechnic University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Awards: G1424135931, G4478582688
OpenAlex ID: W2000322762
