High-quality amorphous silicon germanium produced by catalytic chemical vapor deposition
Year: 1987
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.98871
Author: Hideki Matsumura
Institution: Hiroshima University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2000371318