Work

Line resistance behaviour in narrow lines patterned by a TiN hard mask spacer for 45 nm node interconnects

Year: 2004

Type: article

Source: Microelectronic Engineering

DOI: 10.1016/j.mee.2004.07.046

Authors: W.F.A. Besling, M. Broekaart, V. Arnal, J. Torres

Institutions: Philips (France), STMicroelectronics (France)

Language: English

Topic: Copper Interconnects and Reliability

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2000381128

FWCI: 0.798

Cites: 5

Cited by: 15

Related to: 10