Work

Evidence of electrical activity of extended defects in 3C–SiC grown on Si

Year: 2010

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.3383233

Authors: X. Song, J. F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier

Institutions: Université de Tours, STMicroelectronics (France), NOVASiC (France), Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2000397420

FWCI: 5.146

Cites: 18

Cited by: 71

Related to: 10