Year: 2013
Type: article
Abstract: Ultraviolet–ozone (UV/O3) treatment was adopted to the fabrication of solution-processed amorphous In–Ga–Zn–O thin-film transistors (TFTs), with metal composition of In:Ga:Zn = 1:1:1 represented by InGaZnO4. By applying UV/O3 treatment In–Ga–Zn–O gel films, their condensation was notably enhanced through decomposition of organic- and hydrogen-based elements, which drastically improved the quality of the amorphous InGaZnO4 films. As a result, high TFT performance, with values of on/off ratio, 108; subthreshold swing, 150 mV/decade; threshold voltage, 9.2 V; and field-effect mobility, 5.1 cm2 V−1 s−1, was achieved.
Source: Journal of Applied Physics
DOI: 10.1063/1.4804667
Authors: Kenichi Umeda, Takaaki Miyasako, Ayumu Sugiyama, Atsushi Tanaka, Masayuki Suzuki, Eisuke Tokumitsu, Tatsuya Shimoda
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,500
OpenAlex ID: W2000430649