Work

Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices

Year: 2014

Type: article

Source: Applied Physics A

DOI: 10.1007/s00339-014-8292-8

Authors: O. Khaldi, F. Jomni, P. Gonon, C. Mannequin, B. Yangui

Institutions: Tunis El Manar University, Centre National de la Recherche Scientifique, Université Joseph Fourier, Laboratoire des Technologies de la Microélectronique

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2000444235

FWCI: 1.297

Cites: 22

Cited by: 27

Related to: 10