Work

Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer

Year: 2008

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.2949741

Authors: Y. D. Jang, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, J. Park, D. Lee, H. Y. Liu, M. J. Steer, M. Hopkinson

Institutions: Engineering and Physical Sciences Research Council, Chungnam National University, University College London, University of Sheffield

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2000476459

FWCI: 1.737

Cites: 12

Cited by: 47

Related to: 10