Work

Analytical admittance characterization of high mobility channel

Year: 2015

Type: conference-paper

Abstract: Plasma resonances in a gated semiconductor slab of arbitrary thickness

Source: AIP conference proceedings

DOI: 10.1063/1.4914259

Authors: A. M. Mammeri, F. Z. Mahi, L. Varani

Institutions: University of Bechar, Centre National de la Recherche Scientifique, Université de Montpellier, Institut d'Électronique et des Systèmes

Language: English

Topic: Low-Pressure Plasma Processing and Diagnostics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2000512950

FWCI:

Cites: 4

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Related to: 10