Work

Gallium adlayer adsorption and desorption studies with real-time analysis by spectroscopic ellipsometry and RHEED on A-, M-, and C-plane GaN grown by PAMBE

Year: 2008

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2008.10.088

Authors: P. Misra, C. Boney, D. Starikov, A. Bensaoula

Institutions: Integrated Micro Sensors (United States), University of Houston

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2000580953

FWCI: 0.261

Cites: 7

Cited by: 14

Related to: 10