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Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD

Year: 2006

Type: article

Abstract: Post-implant annealing of Al implanted 4H-SiC has been performed in the temperature range from 1600°C to 1750°C. Annealing was conducted in a hot-wall CVD reactor using a silanerich ambient. Ar was used as the carrier gas to deliver the silane to the annealing zone where the sample was heated via RF induction. The resulting annealed surfaces exhibited a step-bunch free, smooth morphology when viewed on SEM and AFM. The maximum surface roughness as measured via AFM was 0.65 nm RMS for the sample annealed at 1750°C.

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.527-529.839

Authors: Shailaja P. Rao, Fabio Bergamini, Roberta Nipoti, A.M. Hoff, E. Oborina, Stephen E. Saddow

Institutions: Institute for Microelectronics and Microsystems, University of South Florida

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funders: U.S. Forest Service, Office of Naval Research

OpenAlex ID: W2000609025

FWCI: 0.337

Cites: 5

Cited by: 1

Related to: 10