Work

Oxygen-induced high-k degradation in TiN/HfSiO gate stacks

Year: 2012

Type: conference-paper

Source: IEEE Silicon Nanoelectronics Workshop

DOI: 10.1109/snw.2012.6243358

Authors: Takuji Hosoi, Yuki Odake, Keisuke Chikaraishi, Hiroaki Arimura, Naomu Kitano, Takayoshi Shimura, Heiji Watanabe

Institution: The University of Osaka

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2000618296

FWCI: 0.817

Cites: 5

Cited by: 2

Related to: 10