Work

Characteristics of WN Diffusion Barrier Layer for Copper Metallization

Year: 1999

Type: article

Source: physica status solidi (a)

DOI: 10.1002/(sici)1521-396x(199907)174:1<r5::aid-pssa99995>3.0.co;2-x

Authors: M. Y. Kwak, D. H. Shin, T. W. Kang, K. N. Kim

Institutions: Dongguk University, Samsung Electronics (South Korea)

Language: English

Topic: Copper Interconnects and Reliability

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Korea Science and Engineering Foundation

OpenAlex ID: W2000679730

FWCI: 0.572

Cites:

Cited by: 8

Related to: 10