Work

Versatile HV lateral JFETs design in a 0.18μm SOI superjunction BCD technology

Year: 2013

Type: conference-paper

Source: IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

DOI: 10.1109/ispsd.2013.6694449

Authors: Yang Hao, Uta Kuniss, Gabriel Kittler, Alexander Hoelke

Institution: X-Fab (Germany)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2000691810

FWCI: 0.815

Cites: 3

Cited by: 4

Related to: 10