Work

Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC

Year: 2008

Type: article

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.600-603.457

Authors: I.G. Atabaev, Chin Che Tin, B.G. Atabaev, T.M. Saliev, E.N. Bakhranov, N.A. Matchanov, S.L. Lutpullaev, J. Zhang, N.G. Saidkhanova, F.R. Yuzikaeva, I. Nuritdinov, A. Kh. Islomov, M.Z. Amanov, Rusli Rusli, A. Kumta

Institutions: Academy of Sciences Republic of Uzbekistan, Auburn University, Nanyang Technological University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: CRDF Global

OpenAlex ID: W2000716020

FWCI: 0.875

Cites:

Cited by: 10

Related to: 10