Work

UHV-CVD growth and annealing of thin fully relaxed Ge films on (001)Si

Year: 2004

Type: article

Source: Optical Materials

DOI: 10.1016/j.optmat.2004.08.005

Authors: M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, Lam H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, D. Bouchier

Institutions: Université Paris-Sud, Centre National de la Recherche Scientifique, STMicroelectronics (France), Institut de minéralogie, de physique des matériaux et de cosmochimie, Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2000742597

FWCI: 1.224

Cites: 16

Cited by: 30

Related to: 10