Work

Schottky contacts to high-resistivity epitaxial GaAs layers for detectors of particles and X- or γ-ray photons

Year: 2012

Type: article

Source: Semiconductors

DOI: 10.1134/s106378261208009x

Authors: G. I. Koltsov, S. I. Didenko, A. V. Chernykh, S. V. Chernykh, A. P. Chubenko, Yu. N. Sveshnikov

Institutions: National University of Science and Technology, P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Russian Academy of Sciences, Concern Energomera (Russia)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2000781765

FWCI: 0.241

Cites: 8

Cited by: 7

Related to: 10