Effect of p/i interface layer on dark J-V characteristics and Voc in p-i-n a-Si solar cells
Year: 1990
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.345340
Authors: H. Sakai, T. Yoshida, S. Fujikake, T. Hama, Y. Ichikawa
Institution: Fuji Electric (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2000839558