Work

MBE growth and properties of GaCrN

Year: 2003

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(02)02276-5

Authors: M. Hashimoto, Y.K. Zhou, M. Kanamura, H. Katayama-Yoshida, H. Asahi

Institution: The Institute of Scientific and Industrial Research, The University of Osaka

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Education, Culture, Sports, Science and Technology

OpenAlex ID: W2000840190

FWCI: 4.614

Cites: 8

Cited by: 39

Related to: 10