Work

Variation in the lattice parameter and crystal quality of commercially available Si-doped GaAs substrates

Year: 1997

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(97)00009-2

Authors: I.C. Bassignana, D.A. Macquistan, G.C. Hillier, R. Streater, D. Beckett, A. Majeed, C. Miner

Institution: Nortel (Canada)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2000842269

FWCI: 1

Cites: 33

Cited by: 14

Related to: 10