Work

Predictive Physics-Based TCAD Modeling of the Mixed-Mode Degradation Mechanism in SiGe HBTs

Year: 2012

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2012.2210898

Authors: Kurt A. Moen, Partha Sarathi Chakraborty, Uppili S. Raghunathan, John D. Cressler, Hiroshi Yasuda

Institutions: Georgia Institute of Technology, Texas Instruments (United States)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2000845792

FWCI: 1.839

Cites: 15

Cited by: 41

Related to: 10