Work

Electron Beam Absorbed Current as a means of locating metal defectivity on 45nm SOI technology

Year: 2011

Type: conference-abstract

Source: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

DOI: 10.1109/ipfa.2011.5992793

Authors: K. Dickson, G. Lange, K. Erington, J. Ybarra

Language: English

Topic: Integrated Circuits and Semiconductor Failure Analysis

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2000957078

Cites:

Cited by: 8

Related to: 10