Glancing Angle EXAFS Investigation of InGaAs/GaAs Strained Layer Multiple Quantum Wells: Strain and Bond Distances
Year: 1993
Type: conference-abstract
Abstract: The strain distribution in quantum wells of InxGa1-xAs/GaAs (x<0.25) is investigated by glancing-angle EXAFS. The measures have been performed at glancing angles below the critical angle for total reflection in order to avoid substrate contributions to the signal. The results show that a number of Ga-As bond lengths are stretched. Indeed, two Ga-As bonds distances coexist: 2.43±0.01 Å and 2.62±0.04 Å, which correspond to the Ga-As and In-As bond distances in the binary compounds GaAs and InAs, respectively. This result is independent of the In molar fraction in the strained alloy layers.
Language: English
Subfield: Radiation
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2001199721