Work

Stress in chemical-vapor-deposited SiO2 and plasma-SiNx films on GaAs and Si

Year: 1983

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.332779

Author: C. Blaauw

Institution: Bell (Canada)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2001852452

FWCI: 3.311

Cites: 14

Cited by: 52

Related to: 10