MoS 2 nanosheet channel and guanine DNA-base charge injection layer for high performance memory transistors
Year: 2014
Type: article
Source: Journal of Materials Chemistry C
DOI: 10.1039/c4tc00679h
Institution: Yonsei University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2001995466
