Dislocation sources and slip band nucleation from indents on silicon wafers
Year: 2010
Type: article
Abstract: The nucleation of dislocations at controlled indents in silicon during rapid thermal annealing has been studied byin situX-ray diffraction imaging (topography). Concentric loops extending over pairs of inclined {111} planes were formed, the velocities of the inclined and parallel segments being almost equal. Following loss of the screw segment from the wafer, the velocity of the inclined segments almost doubled, owing to removal of the line tension of the screw segments. The loops acted as obstacles to slip band propagation.
Authors: J. Wittge, A. N. Danilewsky, D. Allen, P. McNally, Z. Li, T. Baumbach, E. Gorostegui-Colinas, J. Garagorri, M. R. Elizalde, D. Jacques, M. C. Fossati, D. K. Bowen, B. K. Tanner
Language: English
Subfield: Metals and Alloys
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2002151217