Design of BiCMOS SRAMs for high‐speed SiGe applications
Year: 2014
Type: article
Source: IET Circuits Devices & Systems
Institution: Rensselaer Polytechnic Institute
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: National Science Foundation
OpenAlex ID: W2002161018
