Work

Electrical observations of filamentary conductions for the resistive memory switching in NiO films

Year: 2006

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.2204649

Authors: D. C. Kim, S. Seo, S. E. Ahn, D.-S. Suh, M. J. Lee, B.-H. Park, I. K. Yoo, I. G. Baek, H.-J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U-In Chung, J. T. Moon, B. I. Ryu

Institutions: Samsung Advanced Institute of Technology (South Korea), Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2003015355

FWCI: 39.11

Cites: 9

Cited by: 525

Related to: 10