Work

Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(0 0 1)

Year: 2006

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/0268-1242/21/3/019

Authors: R Ajjel, M Baira, M Gassoumi, H Maaref, B Salem, G Brémond, M Gendry

Institutions: University of Monastir, Centre National de la Recherche Scientifique, Institut National des Sciences Appliquées de Lyon, École Centrale de Lyon

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2003118845

FWCI: 0.373

Cites: 39

Cited by: 5

Related to: 10