Work

GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy

Year: 1999

Type: article

Abstract: GaInN and GaN were grown by molecular beam epitaxy on c-plane sapphire using NH3. 9 K photoluminescence performed on both GaInN thin layers and GaInN/GaN multiple-quantum wells (MQWs) exhibits narrow emission (∼50 meV linewidths). Transmission electron microscopy images show sharp GaInN/GaN interfaces and homogeneous GaInN layers. Strong indium surface segregation is also evidenced. Light-emitting diodes were fabricated from 5×GaInN (25 Å)/GaN (35 Å) MQW heterostructures. The 300 K electroluminescence yields blue light at 440 nm.

Source: Applied Physics Letters

DOI: 10.1063/1.123199

Authors: N. Grandjean, J. Massies, S. Dalmasso, P. Vennéguès, L. Siozade, L. Hirsch

Institutions: Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Université Blaise Pascal, Université de Bordeaux

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2003159504

FWCI: 2.817

Cites: 14

Cited by: 44

Related to: 10