Work

Insights on the transient response of fully and partially depleted SOI technologies under heavy-ion and dose-rate irradiations

Year: 2002

Type: article

Source: IEEE Transactions on Nuclear Science

DOI: 10.1109/tns.2002.805439

Authors: V. Ferlet-Cavrois, G. Gasiot, C. Marcandella, C. D'Hose, O. Flament, O. Faynot, J. du Port de Pontcharra, C. Raynaud

Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA DAM Île-de-France, STMicroelectronics (France), CEA Grenoble, Laboratoire d'Électronique des Technologies de l'Information

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2003185095

FWCI: 7.027

Cites: 25

Cited by: 95

Related to: 10