Work

Simulation of I-V characteristics of organic thin film transistor: Application to the dihexylquaterthiophene

Year: 2001

Type: article

Source: The European Physical Journal Applied Physics

DOI: 10.1051/epjap:2001146

Authors: R. Bourguiga, F. Garnier, G. Horowitz, R. Hajlaoui, P. Delannoy, M. Hajlaoui, H. Bouchriha

Institutions: Tunis University, Centre National de la Recherche Scientifique, Université Paris Diderot

Language: English

Topic: Organic Electronics and Photovoltaics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2003191330

FWCI: 0.837

Cites: 16

Cited by: 19

Related to: 10