Work

The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si

Year: 2000

Type: article

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.338-342.289

Authors: Joerg Pezoldt, György Vida, M. Rouhani Laridjani, M. Averous, T. Wöhner, J.A. Schaefer, Thomas Stauden, Gernot Ecke, R. Pieterwas, Lothar Spieß

Institutions: Technische Universität Ilmenau, Budapest University of Technology and Economics, Université Montpellier 2

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2003199759

FWCI: 0.417

Cites:

Cited by: 13

Related to: 10