Influence of carbon and oxygen on donor formation at 700 °C in Czochralski-grown silicon
Year: 1982
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.331461
Institution: Fujitsu (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2003248331