Work

V-defects formation and optical properties of InGaN/GaN multiple quantum well LED grown on patterned sapphire substrate

Year: 2013

Type: article

Source: Materials Science in Semiconductor Processing

DOI: 10.1016/j.mssp.2013.11.019

Authors: Huanyou Wang, Xianchun Wang, Qiaolai Tan, Xiaohua Zeng

Institutions: Central South University, Hunan University of Arts and Science, Xiangnan University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Natural Science Foundation of Hunan Province, Natural Science Foundation of Hainan Province

OpenAlex ID: W2003281695

FWCI:

Cites: 24

Cited by: 14

Related to: 10