Work

High-Temperature Operation of Silicon Carbide MOSFET

Year: 1987

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.26.310

Authors: Yasushi Kondo, Tetsuo Takahashi, Ken'ichi Ishii, Yutaka Hayashi, Eiichiro Sakuma, Shunji Misawa, Hiroshi Daimon, Mitsugu Yamanaka, Sadafumi Yoshida

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2003302864

FWCI: 3.016

Cites: 2

Cited by: 30

Related to: 10