Work

Single-electron transistor in strained Si/SiGe heterostructures

Year: 2006

Type: article

Source: Physica E Low-dimensional Systems and Nanostructures

DOI: 10.1016/j.physe.2006.03.016

Authors: Thomas Berer, Dietmar Pachinger, Georg Pillwein, Michael Mühlberger, Herbert Lichtenberger, Gerhard Brunthaler, F. Schäffler

Institution: Johannes Kepler University of Linz

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2003404605

FWCI: 1.456

Cites: 10

Cited by: 13

Related to: 10