Work

An ultra-narrow FinFET poly-Si gate structure fabricated with 193nm photolithography and in-situ PR/BARC and TEOS hard mask etching

Year: 2008

Type: conference-paper

Source: Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

DOI: 10.1117/12.769591

Authors: Wen-Shiang Liao, Cheng-Han Wu, Mao-Chyuan Tang, Sheng-Yi Huang, Tommy Shih, Yue-Gie Liaw, Kun-Ming Chen, Tung-Hung Chen, Huan-Chiu Tsen, Lee Chung

Institution: United Microelectronics (Taiwan)

Language: English

Topic: Advancements in Photolithography Techniques

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2003751766

FWCI:

Cites:

Cited by:

Related to: 10