Properties of GaN-based laser diodes with a buried-ridge structure
Year: 2000
Type: article
Source: Journal of Crystal Growth
Authors: Tsunenori Asatsuma, Hiroshi Nakajima, Shigeki Hashimoto, Takashi Yamaguchi, Hiroshi Yoshida, Shigetaka Tomiya, Takeharu Asano, Tomonori Hino, Masafumi Ozawa, Takao Miyajima, Toshimasa Kobayashi, Masao Ikeda
Institution: Sony (Japan)
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2003993322