Work

Theory of transient emission current in MOS devices and the direct determination interface trap parameters

Year: 1974

Type: article

Source: Solid-State Electronics

DOI: 10.1016/0038-1101(74)90059-8

Authors: J.G. Simmons, L.S. Wei

Institution: University of Toronto

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2004042292

FWCI: 11.27

Cites: 12

Cited by: 87

Related to: 10