Work

Characterization of Arsenic Ultra-Shallow Junctions in Silicon Using Photocarrier Radiometry and Spectroscopic Ellipsometry

Year: 2012

Type: article

Source: International Journal of Thermophysics

DOI: 10.1007/s10765-012-1284-z

Authors: Qiuping Huang, Bincheng Li, Weidong Gao

Institutions: Chinese Academy of Sciences, Institute of Optics and Electronics, Chinese Academy of Sciences, University of Chinese Academy of Sciences

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Foundation

OpenAlex ID: W2004117231

FWCI: 0.12

Cites: 11

Cited by: 3

Related to: 10