Work

A physical mechanism of current-induced resistance decrease in heavily doped polysilicon resistors

Year: 1982

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/t-ed.1982.20850

Authors: K. Kato, T. Ono, Y. Amemiya

Institution: NTT (Japan)

Language: English

Topic: Electrical and Thermal Properties of Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2004160619

FWCI: 1.636

Cites: 7

Cited by: 45

Related to: 10