Single heterostructure AlxGa1−xAs phase modulator with SnO2-doped In2O3 cladding layer
Year: 1976
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.88880
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2004179787