Lateral quantum dots in Si∕SiGe realized by a Schottky split-gate technique
Year: 2006
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.2197320
Institution: Johannes Kepler University of Linz
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2004239841