Work

Investigation of charge loss mechanisms in planar and raised STI charge trapping flash memories

Year: 2010

Type: conference-paper

Source: International Conference on Simulation of Semiconductor Processes and Devices

DOI: 10.1109/sispad.2010.5604520

Authors: Zhiliang Xia, Dae Sin Kim, Ju-Yul Lee, Keun-Ho Lee, Young-Kwan Park, Moon-Hyun Yoo, Chilhee Chung

Institutions: Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2004265891

FWCI: 0.427

Cites: 9

Cited by: 6

Related to: 10