Work

Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source

Year: 2012

Type: article

Source: Surface Science

DOI: 10.1016/j.susc.2012.03.006

Authors: G. Monier, L. Bideux, C. Robert-Goumet, B. Gruzza, M. Petit, J.L. Lábár, M. Menyhárd

Institutions: Centre National de la Recherche Scientifique, Institut Pascal, Université Blaise Pascal, Aix-Marseille Université, Centre Interdisciplinaire de Nanoscience de Marseille, Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2004451899

FWCI: 1.428

Cites: 31

Cited by: 30

Related to: 10