A study on the oxidation kinetics of silicon in inductively coupled oxygen plasma
Year: 1999
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.371320
Authors: Yong Woo Choi, Byung Tae Ahn
Institution: Korea Advanced Institute of Science and Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2004504734