Reduced interface state density after photocurrent oscillations and electrochemical hydrogenation of n-Si(111): A surface photovoltage investigation
Year: 1995
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.114263
Authors: S. Rauscher, Th. Dittrich, M. Aggour, J. Rappich, H. Flietner, H. J. Lewerenz
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2004689569